View CMT07N60_35715.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

CMT07N60
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. ! !
FEATURES
! ! ! Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP
SYMBOL
D
Front View
G ATE
SO URCE
DRAIN
G
1
2
3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating Drain to Current Continuous Pulsed Gate-to-Source Voltage Continue Non-repetitive Total Power Dissipation TO-220 TO-220FP Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy TJ = 25 (VDD = 100V, VGS = 10V, IL = 7A, L = 10mH, RG = 25) Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds (1) VDD = 50V, ID = 10A (2) Pulse Width and frequency is limited by TJ(max) and thermal response JC JA TL 1.0 62.5 260 /W TJ, TSTG EAS Symbol ID IDM VGS VGSM PD 147 50 -55 to 150 245 mJ Value 7.0 20 20 40 V V W Unit A
2003/06/19 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 1
CMT07N60
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number CMT07N60 CMT07N60FP Package TO-220 TO-220 Full Pak
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
CMT07N60 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) * Forward Transconductance (VDS = 40 V, ID = 3.5A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 300 V, ID = 7.0 A, VGS = 10 V, RG = 9.1) * (VDS = 480 V, ID = 7.0 A, VGS = 10 V)* Symbol V(BR)DSS IDSS 100 100 IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 4.0 1380 115 23 30 80 125 85 38 6.4 15 4.5 7.5 1800 150 30 70 170 260 180 50 2.0 100 100 4.0 1.2 nA nA V mhos pF pF pF ns ns ns ns nC nC nC nH nH Min 600 Typ Max Units V A
Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25" from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS =7.0 A, dIS/dt = 100A/s)
VSD ton trr ** 415
1.4
V ns ns
* Pulse Test: Pulse Width 300s, Duty Cycle 2% ** Negligible, Dominated by circuit inductance
2003/06/19 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 2
CMT07N60
POWER FIELD EFFECT TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
2003/06/19 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 3
CMT07N60
POWER FIELD EFFECT TRANSISTOR
2003/06/19 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 4
CMT07N60
POWER FIELD EFFECT TRANSISTOR
2003/06/19 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 5
CMT07N60
POWER FIELD EFFECT TRANSISTOR
PACKAGE DIMENSION
TO-220
D A c1
F E
PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE
E1
A A1
L1
b b1 c c1 D
L
E E1 e e1 F L
b1 e1
e b
A1 c Side View
L1
Front View
TO-220FP
0
I J
R1 .5 0
R1 .5 0
B C
.1 0 18 . R3
D
Q
H
A B
A
C D
E
E
P
K O
G H I J K M N O P Q
0 .6 R1
G
b
R b b1 b2 e
b1 e Front View
b2 R
N M
Side View
Back View
2003/06/19 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 6
CMT07N60
POWER FIELD EFFECT TRANSISTOR
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for Use of CMC products in such applications is In order to minimize risks associated with the customer's applications, the use in life-support applications, devices or systems or other critical applications. understood to be fully at the risk of the customer. customer should provide adequate design and operating safeguards.
HsinChu Headquarter
5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909
Sales & Marketing
11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan T E L : +886-2-8692 1591 F A X : +886-2-8692 1596
2003/06/19 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 7

▲Up To Search▲

Price & Availability of CMT07N60

	To Download CMT07N60 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .